Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor

Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and the fifth-generation trench gate IGBT technol...

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Bibliographic Details

Published in:	Engineering
Main Authors:	Guoyou Liu, Rongjun Ding, Haihui Luo
Format:	Article
Language:	English
Published:	Elsevier 2015-09-01
Subjects:	insulated-gate bipolar transistor (IGBT) high power density trench gate 8-inch rail transportation
Online Access:	http://www.sciencedirect.com/science/article/pii/S2095809916300133