Improvement in the planarization of 4H-SiC(0001) achieved by photo-assisted chemical mechanical polishing (P-CMP) using nano TiO2-based composite abrasive with heterostructure

The planarization of silicon carbide (SiC), which is crucial for manufacturing power devices resilient to harsh working environments, has garnered significant attention. The utilization of titanium dioxide (TiO2)-based heterogeneous photocatalysts offers a promising avenue for achieving efficient po...

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Bibliographic Details

Published in:	Friction
Main Authors:	Shidong Chen, Hong Lei
Format:	Article
Language:	English
Published:	Tsinghua University Press 2025-07-01
Subjects:	titanium dioxide (tio2) nanodiamonds (nds) graphene oxide (go) heterojunction silicon carbide (sic) photo-assisted chemical mechanical polishing (p-cmp)
Online Access:	https://www.sciopen.com/article/10.26599/FRICT.2025.9440993