Designing process and analysis of a new SOI-MESFET structure with enhanced DC and RF characteristics for high-frequency and high-power applications.

This research introduces a new designing process and analysis of an innovative Silicon-on-Insulator Metal-Semiconductor Field-Effect (SOI MESFET) structure that demonstrates improved DC and RF characteristics. The design incorporates several modifications to control and reduce the electric field con...

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Bibliographic Details

Published in:	PLoS ONE
Main Authors:	Ahmad Ghiasi, Lewis Nkenyereye, Fawwaz Hazzazi, Muhammad Akmal Chaudhary, Maher Assaad, Abbas Rezaei
Format:	Article
Language:	English
Published:	Public Library of Science (PLoS) 2024-01-01
Online Access:	https://doi.org/10.1371/journal.pone.0301980