Optimizing deposition regimes to fabricate VO2/TiO2/c-Al2O3 thin films for active metasurfaces

Decreasing the scale of vanadium dioxide (VO2) structures is one of the ways to enhance the switching speed of the material. We study the properties of VO2 films of altered thicknesses in the range of 20–170[Formula: see text]nm prepared on c-sapphire substrates with a TiO2 sublayer by pulsed laser...

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Bibliographic Details

Published in:	Journal of Advanced Dielectrics
Main Authors:	M. E. Kutepov, V. E. Kaydashev, D. V. Stryukov, A. S. Konstantinov, A. S. Mikheykin, A. V. Nikolskiy, A. T. Kozakov, A. D. Morozov, M. A. Kashchenko, G. V. Alymov, E. M. Kaidashev
Format:	Article
Language:	English
Published:	World Scientific Publishing 2024-12-01
Subjects:	Pulsed laser deposition (PLD) VO2 TiO2 thin films sapphire
Online Access:	https://www.worldscientific.com/doi/10.1142/S2010135X23400118