Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory

Abstract Ovonic threshold switching (OTS) selectors based on amorphous chalcogenides can revolutionize 3D memory technology owing to their self‐selecting memory (SSM) behavior. However, the complex mechanism governing the memory writing operation limits compositional and device optimization. This st...

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Bibliographic Details

Published in:	Advanced Science
Main Authors:	Ha‐Jun Sung, Minwoo Choi, Zhe Wu, Hwasung Chae, Sung Heo, Youngjae Kang, Bonwon Koo, Jong‐Bong Park, Wooyoung Yang, Yongyoung Park, Yongnam Ham, Kiyeon Yang, Chang Seung Lee
Format:	Article
Language:	English
Published:	Wiley 2024-11-01
Subjects:	amorphous chalcogenides self‐selecting memory ovonic threshold switching
Online Access:	https://doi.org/10.1002/advs.202408028