Compact Modeling and Analysis of Voltage-Gated Spin-Orbit Torque Magnetic Tunnel Junction

Recently, experimental results have demonstrated that perpendicular magnetic tunnel junction (p-MTJ) with the antiferromagnetic(AFM)/ferromagnetic (FM)/oxide structure can achieve field-free spin-orbit torque (SOT) switching since the AFM metal strip can not only generate the SOT, but also provide a...

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Bibliographic Details

Published in:	IEEE Access
Main Authors:	Kaili Zhang, Deming Zhang, Chengzhi Wang, Lang Zeng, You Wang, Weisheng Zhao
Format:	Article
Language:	English
Published:	IEEE 2020-01-01
Subjects:	p-MTJ antiferromagnetic field-free SOT switching exchange bias VCMA voltage-gated SOT
Online Access:	https://ieeexplore.ieee.org/document/9032097/