Pt thin-film resistance thermo detectors with stable interfaces for potential integration in SiC high-temperature pressure sensors

Abstract Due to the excellent mechanical, chemical, and electrical properties of third-generation semiconductor silicon carbide (SiC), pressure sensors utilizing this material might be able to operate in extreme environments with temperatures exceeding 300 °C. However, the significant output drift a...

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Bibliographic Details

Published in:	Microsystems & Nanoengineering
Main Authors:	Ziyan Fang, Xiaoyu Wu, Hu Zhao, Xudong Fang, Chen Wu, Dong Zhang, Zhongkai Zhang, Bian Tian, Libo Zhao, Tiefu Li, Prateek Verma, Ryutaro Maeda, Zhuangde Jiang
Format:	Article
Language:	English
Published:	Nature Publishing Group 2024-09-01
Online Access:	https://doi.org/10.1038/s41378-024-00746-w