High throughput observation of latent images on resist using laser-based photoemission electron microscopy

The rapid evolution of lithography technology necessitates faster pattern inspection methods. Here, we propose the use of laser-based photoemission electron microscopy (laser-PEEM) for high-throughput observation of latent images on an electron beam resist. We revealed that this technique can visual...

詳細記述

書誌詳細

出版年:	Applied Physics Express
主要な著者:	Hirokazu Fujiwara, Cédric Bareille, Mario Okawa, Shik Shin, Toshiyuki Taniuchi
フォーマット:	論文
言語:	英語
出版事項:	IOP Publishing 2024-01-01
主題:	Latent image Photoemission electron microscopy Resist pattern inspection Lithography
オンライン･アクセス:	https://doi.org/10.35848/1882-0786/ad6db6