Sparse Code With Minimum Hamming Distance of Three for Spin-Torque Transfer Magnetic Random Access Memory

Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM). However, STT-MRAM faces challenges due to process variations and thermal fluctuations, resulting in independent errors during the writing and r...

Full description

Bibliographic Details

Published in:	IEEE Access
Main Authors:	Thien An Nguyen, Jaejin Lee
Format:	Article
Language:	English
Published:	IEEE 2023-01-01
Subjects:	Asymmetric write error rate cascaded channel error correction codes (ECCs) Hamming code non-volatile RAM sparse codes
Online Access:	https://ieeexplore.ieee.org/document/10283818/