Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90...

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Bibliographic Details
Published in:Frontiers in Materials
Main Authors: Wei-Ting eLai, Kuo-Ching eYang, Po-Hsiang eLiao, Tom eGeorge, Pei-Wen eLi
Format: Article
Language:English
Published: Frontiers Media S.A. 2016-02-01
Subjects:
interface
SiGe
Size-tunable
MOS
Gate-stack
Ge-dot
Online Access:http://journal.frontiersin.org/Journal/10.3389/fmats.2016.00005/full

Internet

http://journal.frontiersin.org/Journal/10.3389/fmats.2016.00005/full

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