Performance Investigation of Source Extension Approach on III–V Vertical Tunnel FET

A triple-metal-gate stacked III–V vertical tunnel field-effect transistor (TM-GS-VTFET) structure is examined. There are two different TM-GS-VTFETs: Device-A, which uses a source pocket, and Device-B, which uses a new source extension approach. Source pocket-engaged TFETs are recognized f...

Full description

Bibliographic Details

Published in:	IEEE Access
Main Authors:	M. Saravanan, Eswaran Parthasarathy
Format:	Article
Language:	English
Published:	IEEE 2024-01-01
Subjects:	TFET stacked gate source extension source pocket tunneling GaSb
Online Access:	https://ieeexplore.ieee.org/document/10504816/