In-Built N⁺ Pocket Electrically Doped Tunnel FET With Improved DC and Analog/RF Performance

In this paper, we present an in-built N⁺ pocket electrically doped tunnel FET (ED-TFET) based on the polarity bias concept that enhances the DC and analog/RF performance. The proposed device begins with a MOSFET like structure (n-p-n) with a control gate (CG) and a polarity ga...

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Bibliographic Details

Published in:	Micromachines
Main Authors:	Jun Li, Ying Liu, Su-fen Wei, Chan Shan
Format:	Article
Language:	English
Published:	MDPI AG 2020-10-01
Subjects:	band-to-band tunneling (BTBT) polarity gate (PG) ON-state current electrically doping tunnel FETs (TFETs)
Online Access:	https://www.mdpi.com/2072-666X/11/11/960