Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy

In this paper, thermoreflectance microscopy was used to measure the high spatial resolution temperature distribution of the p-GaN HEMT under high power density. The maximum temperature along the GaN channel was located at the drain-side gate edge region. It was found that the thermal resistance (<...

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書誌詳細

出版年:	Micromachines
主要な著者:	Hongyue Wang, Chao Yuan, Yajie Xin, Yijun Shi, Yaozong Zhong, Yun Huang, Guoguang Lu
フォーマット:	論文
言語:	英語
出版事項:	MDPI AG 2022-03-01
主題:	thermoreflectance p-GaN HEMT thermal characteristics
オンライン･アクセス:	https://www.mdpi.com/2072-666X/13/3/466