Dependence of static dielectric constant of silicon on resistivity at room temperature

The static dielectric constant of the heavily doped silicon at room temperature is considered. By using phosphorus as an example, the existing expression for the static dielectric constant at low temperatures is recast into a form suitable for the application at room temperature. This is done by tak...

Full description

Bibliographic Details

Published in:	Serbian Journal of Electrical Engineering
Main Authors:	Ristić Stojan, Prijić Aneta, Prijić Zoran
Format:	Article
Language:	English
Published:	Faculty of Technical Sciences in Cacak 2004-01-01
Subjects:	static dielectric constant heavily doped silicon room temperature
Online Access:	http://www.doiserbia.nb.rs/img/doi/1451-4869/2004/1451-48690402237R.pdf