On short channel effects in high voltage JFETs: A theoretical analysis

In this work, the impact of Short Channel Effects (SCEs), particularly Drain Induced Barrier Lowering (DIBL) on the performance of a high voltage Silicon Carbide (SiC) JFET has been thoroughly investigated. Drift-Diffusion simulations of on-state current-voltage characteristics and breakdown perform...

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الحاوية / القاعدة:	Power Electronic Devices and Components
المؤلفون الرئيسيون:	F. Monaghan, A. Martinez, J. Evans, C. Fisher, M. Jennings
التنسيق:	مقال
اللغة:	الإنجليزية
منشور في:	Elsevier 2024-04-01
الموضوعات:	Silicon carbide JFET Drain induced barrier lowering Short channel effects Breakdown voltage Model
الوصول للمادة أونلاين:	http://www.sciencedirect.com/science/article/pii/S2772370424000026