Ultra-small Hysteresis IGZO Thin-Film Transistors with Room-Temperature Sputtered SiO2 as Dielectric Layer

A sputtered silicon dioxide dielectric is prepared for fabrication of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). We analyzed the dependence of device characteristics on gate voltage range. Clockwise hysteresis occurs at a low gate voltage ( Vgs ≤ 3 V) due to oxide traps near the...

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Bibliographic Details

Published in:	Journal of Applied Science and Engineering
Main Authors:	Fangfei Han, Zheng Lu, Luan Fu, Lulu Du, Xiaohui Shi
Format:	Article
Language:	English
Published:	Tamkang University Press 2025-03-01
Subjects:	indium gallium zinc oxide (igzo) thin-film transistors (tfts) hysteresis sputtered sio2
Online Access:	http://jase.tku.edu.tw/articles/jase-202510-28-10-0011