Electrostatic Field Effect Light-Emitting Diode

Gallium Nitride (GaN) based light-emitting diodes (LEDs) suffer from the persistent issue of high resistivity of the p-type layer, due to inefficient dopant activation at room temperature. Here, a novel Electrostatic Field Effect LED (EFELED) is demonstrated to solve this issue by introducing signif...

Full description

Bibliographic Details
Published in:IEEE Photonics Journal
Main Authors: Matthew Hartensveld, Bryan Melanson, Jing Zhang
Format: Article
Language:English
Published: IEEE 2020-01-01
Subjects:
LED
GaN
FET
electrostatic doping
LED display
capacitor
Online Access:https://ieeexplore.ieee.org/document/9086082/

Internet

https://ieeexplore.ieee.org/document/9086082/

Similar Items