Nanotribological Characteristics of the Al Content of Al<sub>x</sub>Ga<sub>1−x</sub>N Epitaxial Films

The nanotribological properties of aluminum gallium nitride (Al<sub>x</sub>Ga<sub>1−x</sub>N) epitaxial films grown on low-temperature-grown GaN/AlN/Si substrates were investigated using a nanoscratch system. It was confirmed that the Al compositions played an important role,...

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Bibliographic Details
Published in:Nanomaterials
Main Authors: Hua-Chiang Wen, Ssu-Kuan Wu, Cheng-Wei Liu, Jin-Ji Dai, Wu-Ching Chou
Format: Article
Language:English
Published: MDPI AG 2023-10-01
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Online Access:https://www.mdpi.com/2079-4991/13/21/2884