High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Abstract With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories. However, developing ferroelectric memories that simultaneously exhibit good flexibility and significant performance has proven...

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Bibliographic Details

Published in:	Nature Communications
Main Authors:	Qingxuan Li, Siwei Wang, Zhenhai Li, Xuemeng Hu, Yongkai Liu, Jiajie Yu, Yafen Yang, Tianyu Wang, Jialin Meng, Qingqing Sun, David Wei Zhang, Lin Chen
Format:	Article
Language:	English
Published:	Nature Portfolio 2024-03-01
Online Access:	https://doi.org/10.1038/s41467-024-46878-5