Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure
Abstract In this study, we demonstrate binary and ternary logic-in-memory (LIM) operations of inverters and NAND and NOR gates comprising nanosheet (NS) feedback field-effect transistors (FBFETs) with a triple-gated structure. The NS FBFETs are reconfigured in p- or n-channel modes depending on the...
| Published in: | Scientific Reports |
|---|---|
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-03-01
|
| Online Access: | https://doi.org/10.1038/s41598-024-57290-w |