Polarization Gradient Effect of Negative Capacitance LTFET
In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO<sub>2</sub>) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET, a steeper subthreshold swin...
| Published in: | Micromachines |
|---|---|
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-02-01
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| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/13/3/344 |