Polarization Gradient Effect of Negative Capacitance LTFET
In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO<sub>2</sub>) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET, a steeper subthreshold swin...
| الحاوية / القاعدة: | Micromachines |
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| المؤلفون الرئيسيون: | , , , , , , , , |
| التنسيق: | مقال |
| اللغة: | الإنجليزية |
| منشور في: |
MDPI AG
2022-02-01
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://www.mdpi.com/2072-666X/13/3/344 |
| _version_ | 1850342608770957312 |
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| author | Hao Zhang Shupeng Chen Hongxia Liu Shulong Wang Dong Wang Xiaoyang Fan Chen Chong Chenyu Yin Tianzhi Gao |
| author_facet | Hao Zhang Shupeng Chen Hongxia Liu Shulong Wang Dong Wang Xiaoyang Fan Chen Chong Chenyu Yin Tianzhi Gao |
| author_sort | Hao Zhang |
| collection | DOAJ |
| container_title | Micromachines |
| description | In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO<sub>2</sub>) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET, a steeper subthreshold swing (SS = 18.4 mV/dec) of NC-LTFET is obtained by the mechanism of line tunneling at low gate voltage instead of diagonal tunneling, which is caused by the non-uniform voltage across the gate oxide layer. In addition, we report the polarization gradient effect in a negative capacitance TFET for the first time. It is noted that the polarization gradient effect should not be ignored in TFET. When the polarization gradient parameter g grows larger, the dominant tunneling mechanism that affects the SS is the diagonal tunneling. The on-state current (I<sub>on</sub>) and SS of NC-LTFET become worse. |
| format | Article |
| id | doaj-art-d35337c0cfd5410a861fca7ea2f2b83a |
| institution | Directory of Open Access Journals |
| issn | 2072-666X |
| language | English |
| publishDate | 2022-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| spelling | doaj-art-d35337c0cfd5410a861fca7ea2f2b83a2025-08-19T23:13:35ZengMDPI AGMicromachines2072-666X2022-02-0113334410.3390/mi13030344Polarization Gradient Effect of Negative Capacitance LTFETHao Zhang0Shupeng Chen1Hongxia Liu2Shulong Wang3Dong Wang4Xiaoyang Fan5Chen Chong6Chenyu Yin7Tianzhi Gao8Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaIn this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO<sub>2</sub>) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET, a steeper subthreshold swing (SS = 18.4 mV/dec) of NC-LTFET is obtained by the mechanism of line tunneling at low gate voltage instead of diagonal tunneling, which is caused by the non-uniform voltage across the gate oxide layer. In addition, we report the polarization gradient effect in a negative capacitance TFET for the first time. It is noted that the polarization gradient effect should not be ignored in TFET. When the polarization gradient parameter g grows larger, the dominant tunneling mechanism that affects the SS is the diagonal tunneling. The on-state current (I<sub>on</sub>) and SS of NC-LTFET become worse.https://www.mdpi.com/2072-666X/13/3/344NC-LTFETsubthreshold swingferroelectric gate oxidepolarization gradient |
| spellingShingle | Hao Zhang Shupeng Chen Hongxia Liu Shulong Wang Dong Wang Xiaoyang Fan Chen Chong Chenyu Yin Tianzhi Gao Polarization Gradient Effect of Negative Capacitance LTFET NC-LTFET subthreshold swing ferroelectric gate oxide polarization gradient |
| title | Polarization Gradient Effect of Negative Capacitance LTFET |
| title_full | Polarization Gradient Effect of Negative Capacitance LTFET |
| title_fullStr | Polarization Gradient Effect of Negative Capacitance LTFET |
| title_full_unstemmed | Polarization Gradient Effect of Negative Capacitance LTFET |
| title_short | Polarization Gradient Effect of Negative Capacitance LTFET |
| title_sort | polarization gradient effect of negative capacitance ltfet |
| topic | NC-LTFET subthreshold swing ferroelectric gate oxide polarization gradient |
| url | https://www.mdpi.com/2072-666X/13/3/344 |
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