Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories

Abstract Since the first report of ferroelectric HfO2 in 2011, researchers are making rapid progress in the understanding of both material properties and applications. Due to its compatibility with complementary metal oxide semiconductor, high coercivity voltage and the fact that ultrathin films rem...

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Bibliographic Details

Published in:	Advanced Materials Interfaces
Main Authors:	Kun Chen, Dan Zheng, Jie Gao, Hao Wang, Baoyuan Wang
Format:	Article
Language:	English
Published:	Wiley-VCH 2025-02-01
Subjects:	fatigue ferroelectric memories ferroelectric thin films Hf0.5Zr0.5O2 magnetron sputtering reliability optimization
Online Access:	https://doi.org/10.1002/admi.202400367