Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity

Abstract Green energy collection is crucial for achieving future net‐zero carbon emissions, with energy harvesting being a key solution. Silicon, a widely used p‐type semiconductor doped with boron ions, is prevalent in modern electronics. However, the impact of lattice boundaries from ion implantat...

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Bibliographic Details

Published in:	Advanced Materials Interfaces
Main Authors:	Shang Yu Tsai, Po‐Hsien Tseng, Chun Chi Chen, Cheng‐Ming Huang, Hung‐Wei Yen, Yi‐Sheng Chen, Kun‐Lin Lin, Ranming Niu, Yu‐Sheng Lai, Fu‐Hsiang Ko
Format:	Article
Language:	English
Published:	Wiley-VCH 2024-12-01
Subjects:	atom probe tomography block of phonon penetration boron interstitial‐formed boundaries heavily boron‐doped silicon layer thermoelectricity
Online Access:	https://doi.org/10.1002/admi.202400536