Epitaxial La0.5Sr0.5MnO3‐δ Bipolar Memristive Devices with Tunable and Stable Multilevel States

Abstract Valence change memories are novel data storage devices in which the resistance is determined by a reversible redox reaction triggered by voltage. The oxygen content and mobility within the active materials of these devices play a crucial role in their performance. Therefore, materials which...

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Bibliographic Details

Published in:	Advanced Materials Interfaces
Main Authors:	Carlos Moncasi, Gauthier Lefèvre, Quentin Villeger, Laetitia Rapenne, Thoai‐Khanh Khuu, Fabrice Wilhelm, Andrei Rogalev, Carmen Jiménez, Mónica Burriel
Format:	Article
Language:	English
Published:	Wiley-VCH 2023-05-01
Subjects:	epitaxial thin films manganites memristive devices metal‐organic chemical vapor deposition (MOCVD) oxygen vacancies resistive switching
Online Access:	https://doi.org/10.1002/admi.202202496