Trap-assisted monolayer ReSe2/Si heterojunction with high photoconductive gain and self-driven broadband photodetector.

The development of photodetectors is crucial in fields such as optical communication, image sensing, medical devices and military equipment, where high sensitivity is paramount. We fabricated an ambipolar photodiode using monolayer triclinic ReSe2, synthesized by chemical vapor deposition on p-type...

Full description

Bibliographic Details

Published in:	Frontiers in Materials
Main Authors:	Beomsu Jo, Kanghoon Seo, Kyumin Park, Chaewon Jeong, Bathalavaram Poornaprakash, Moonsang Lee, Singiri Ramu, Myung Gwan Hahm, Young Lae Kim
Format:	Article
Language:	English
Published:	Frontiers Media S.A. 2024-02-01
Subjects:	ReSe2 photodetector heterojunction high photoconductive gain broadband photodetector
Online Access:	https://www.frontiersin.org/articles/10.3389/fmats.2024.1354522/full