Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors

Oxygen vacancies are a major factor that controls the electrical characteristics of the amorphous indium-gallium-zinc oxide transistor (a-IGZO TFT). Oxygen vacancies are affected by the composition ratio of the a-IGZO target and the injected oxygen flow rate. In this study, we fabricated three types...

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Bibliographic Details
Published in:Micromachines
Main Authors: Youngmin Han, Dong Hyun Lee, Eou-Sik Cho, Sang Jik Kwon, Hocheon Yoo
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Subjects:
a-IGZO
magnetron sputtering
thin-film transistors
oxygen vacancy
oxygen flow rate
Online Access:https://www.mdpi.com/2072-666X/14/7/1394

Internet

https://www.mdpi.com/2072-666X/14/7/1394

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