SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600V lateral SiC power MOSFETs and low-voltage SiC CMOS devices. It enables application-specific SiC ICs with high power output and work under harsh (high-temperature and radioactive) environments compare...

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Bibliographic Details

Published in:	IEEE Journal of the Electron Devices Society
Main Authors:	Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Ayman Fayed, Marvin H. White, Anant K. Agarwal
Format:	Article
Language:	English
Published:	IEEE 2022-01-01
Subjects:	SiC MOSFETs CMOS circuits smart power IC SPICE modeling trapped interface charges
Online Access:	https://ieeexplore.ieee.org/document/9709592/