Efficient Diode Performance with Improved Effective Carrier Lifetime and Absorption Using Bismuth Nanoparticles Passivated Silicon Nanowires

In this paper, we report a novel design of bismuth nanoparticle-passivated silicon nanowire (Bi@SiNW) heterojunction composites for high diode performances and improved effective carrier lifetime and absorption properties. High-density vertically aligned SiNWs were fabricated using a simple and cost...

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發表在:	Nanomaterials
Main Authors:	Mariem Naffeti, Mohamed Ali Zaïbi, Alejandro Vidal García-Arias, Radhouane Chtourou, Pablo Aitor Postigo
格式:	Article
語言:	英语
出版:	MDPI AG 2022-10-01
主題:	Si nanowires Bi nanoparticles surface passivation Schottky diode minority carrier lifetime absorption
在線閱讀:	https://www.mdpi.com/2079-4991/12/21/3729