InGaN quantum dots with short exciton lifetimes grown on polar c-plane by metal-organic chemical vapor deposition

An investigation of self-assembled polar InGaN quantum dots (QDs) on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD) is reported. The radiative exciton lifetime is measured by time-resolved photoluminescence at a low temperature of 18 K, where the non-radiative recombi...

Full description

Bibliographic Details

Published in:	Materials Research Express
Main Authors:	Chunyu Zhao, Chak Wah Tang, Guanghui Cheng, Jiannong Wang, Kei May Lau
Format:	Article
Language:	English
Published:	IOP Publishing 2020-01-01
Subjects:	quantum dots MOCVD InGaN lifetime
Online Access:	https://doi.org/10.1088/2053-1591/abcac2