Threshold Switching and Resistive Switching in SnO₂-HfO₂ Laminated Ultrathin Films

Polycrystalline SnO₂-HfO₂ nanolaminated thin films were grown by atomic layer deposition (ALD) on SiO₂/Si(100) and TiN substrates at 300 °C. The samples, when evaluated electrically, exhibited bipolar resistive switching. The sampl...

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發表在:	Crystals
Main Authors:	Kristjan Kalam, Mark-Erik Aan, Joonas Merisalu, Markus Otsus, Peeter Ritslaid, Kaupo Kukli
格式:	Article
語言:	英语
出版:	MDPI AG 2024-10-01
主題:	atomic layer deposition tin oxide hafnium oxide bipolar resistive switching threshold resistive switching
在線閱讀:	https://www.mdpi.com/2073-4352/14/10/909