New Compact Electron Cyclotron Resonance Plasma Source for Silicon Nitride Film Formation in Minimal Fab System

A compact magnetic-mirror confined electron cyclotron resonance plasma source for low-damage plasma processings was developed, especially aiming for the realization of high-quality silicon nitride film formation for the sub-micron complementary metal-oxide semiconductor device processes in the minim...

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Bibliographic Details
Published in:IEEE Journal of the Electron Devices Society
Main Authors: Tetsuya Goto, Kei-Ichiro Sato, Yuki Yabuta, Shigetoshi Sugawa, Shiro Hara
Format: Article
Language:English
Published: IEEE 2018-01-01
Subjects:
Minimal fab system
silicon nitride
plasma damage
Online Access:https://ieeexplore.ieee.org/document/8107492/

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https://ieeexplore.ieee.org/document/8107492/

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