Conductive filament formation in the failure of Hf0.5Zr0.5O2 ferroelectric capacitors

Ferroelectric materials provide pathways to higher performance logic and memory technologies, with Hf0.5Zr0.5O2 being the most popular among them. However, critical challenges exist in understanding the material’s failure mechanisms to design long endurance lifetimes. In this work, dielectric failur...

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書誌詳細

出版年:	APL Materials
主要な著者:	Matthew Webb, Tony Chiang, Megan K. Lenox, Jordan Gray, Tao Ma, Jon F. Ihlefeld, John T. Heron
フォーマット:	論文
言語:	英語
出版事項:	AIP Publishing LLC 2025-01-01
オンライン･アクセス:	http://dx.doi.org/10.1063/5.0248765