Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing

In this paper, we propose for the first time a self-refreshing mechanism in a junctionless field-effect transistor (JLFET) based on one-transistor dynamic random-access memory (1T-DRAM) with a silicon-on-insulator (SOI) structure. The self-refreshing mechanism continuously creates holes by appropria...

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書誌詳細

出版年:	Nanomaterials
主要な著者:	Sang Ho Lee, Jin Park, Young Jun Yoon, In Man Kang
フォーマット:	論文
言語:	英語
出版事項:	MDPI AG 2024-01-01
主題:	junctionless field-effect transistor silicon-on-insulator one-transistor dynamic random-access memory self-refreshing operation
オンライン･アクセス:	https://www.mdpi.com/2079-4991/14/2/179