Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf0.5Zr0.5O2 Fatigue

Abstract As a promising candidate for nonvolatile memory devices, the hafnia‐based ferroelectric system has recently been a hot research topic. Although significant progress has been made over the past decade, the endurance problem is still an obstacle to its final application. In perovskite‐based f...

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Bibliographic Details
Published in:Advanced Electronic Materials
Main Authors: Zimeng Zhang, Isaac Craig, Tao Zhou, Martin Holt, Raul Flores, Evan Sheridan, Katherine Inzani, Xiaoxi Huang, Joyeeta Nag, Bhagwati Prasad, Sinéad M. Griffin, Ramamoorthy Ramesh
Format: Article
Language:English
Published: Wiley-VCH 2024-09-01
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Online Access:https://doi.org/10.1002/aelm.202300877