Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

Effect of structural relaxation (SR) on the electrical characteristics and bias stability of solution-processed zinc–tin oxide (ZTO) thin-film transistors (TFTs) were systematically investigated by controlling the annealing time of the ZTO semiconductor films. Note that SR was found to increase with...

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Bibliographic Details

Published in:	Nanomaterials
Main Authors:	Yu-Jin Hwang, Do-Kyung Kim, Sang-Hwa Jeon, Ziyuan Wang, Jaehoon Park, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Jin-Hyuk Bae
Format:	Article
Language:	English
Published:	MDPI AG 2022-09-01
Subjects:	structural relaxation electrical characteristics bias stability zinc–tin oxide thin-film transistor solution process
Online Access:	https://www.mdpi.com/2079-4991/12/18/3097