APA (7th ed.) Citation

Hwang, Y., Kim, D., Jeon, S., Wang, Z., Park, J., Lee, S., . . . Bae, J. (2022, September). Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors. Nanomaterials.

Chicago Style (17th ed.) Citation

Hwang, Yu-Jin, Do-Kyung Kim, Sang-Hwa Jeon, Ziyuan Wang, Jaehoon Park, Sin-Hyung Lee, Jaewon Jang, In Man Kang, and Jin-Hyuk Bae. "Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors." Nanomaterials Sep. 2022.

MLA (9th ed.) Citation

Hwang, Yu-Jin, et al. "Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors." Nanomaterials, Sep. 2022.