Flexible In<sub>2</sub>O<sub>3</sub> Nanowire Transistors on Paper Substrates
Flexible In<sub>2</sub>O<sub>3</sub> nanowire transistors gated by microporous SiO<sub>2</sub>-based solid electrolytes are fabricated on paper substrates at room temperature. Low-voltage (1.0 V) operation of these devices is realized owing to the large electric-d...
| Published in: | IEEE Journal of the Electron Devices Society |
|---|---|
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
|
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7835666/ |