Flexible In<sub>2</sub>O<sub>3</sub> Nanowire Transistors on Paper Substrates
Flexible In<sub>2</sub>O<sub>3</sub> nanowire transistors gated by microporous SiO<sub>2</sub>-based solid electrolytes are fabricated on paper substrates at room temperature. Low-voltage (1.0 V) operation of these devices is realized owing to the large electric-d...
| Published in: | IEEE Journal of the Electron Devices Society |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7835666/ |
| _version_ | 1852717203026083840 |
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| author | Huixuan Liu Jing Li Rongri Tan |
| author_facet | Huixuan Liu Jing Li Rongri Tan |
| author_sort | Huixuan Liu |
| collection | DOAJ |
| container_title | IEEE Journal of the Electron Devices Society |
| description | Flexible In<sub>2</sub>O<sub>3</sub> nanowire transistors gated by microporous SiO<sub>2</sub>-based solid electrolytes are fabricated on paper substrates at room temperature. Low-voltage (1.0 V) operation of these devices is realized owing to the large electric-double-layer capacitance of (1.73 μF/cm<sup>2</sup> at 20 Hz) of the microporous SiO<sub>2</sub> solid electrolytes, which were deposited at room temperature. The subthreshold swing, current on/off ratio, and field-effect mobility of the paper-based nanowire transistors are estimated to be 74 mV/decade, 1.7×10<sup>6</sup>, and 218.3 cm<sup>2</sup>/V·s, respectively. These low-voltage paper-based nanowire transistors show promise for use in portable flexible paper electronics and low-cost portable sensors. |
| format | Article |
| id | doaj-art-e063dde0156e4a46a1f73e0e2d7cb63c |
| institution | Directory of Open Access Journals |
| issn | 2168-6734 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| spelling | doaj-art-e063dde0156e4a46a1f73e0e2d7cb63c2025-08-19T21:14:01ZengIEEEIEEE Journal of the Electron Devices Society2168-67342017-01-015214114410.1109/JEDS.2017.26604937835666Flexible In<sub>2</sub>O<sub>3</sub> Nanowire Transistors on Paper SubstratesHuixuan Liu0https://orcid.org/0000-0001-7654-5099Jing Li1Rongri Tan2Department of Physics, Jiangxi Science and Technology Normal University, Nanchang, ChinaDepartment of Physics, Jiangxi Science and Technology Normal University, Nanchang, ChinaDepartment of Physics, Jiangxi Science and Technology Normal University, Nanchang, ChinaFlexible In<sub>2</sub>O<sub>3</sub> nanowire transistors gated by microporous SiO<sub>2</sub>-based solid electrolytes are fabricated on paper substrates at room temperature. Low-voltage (1.0 V) operation of these devices is realized owing to the large electric-double-layer capacitance of (1.73 μF/cm<sup>2</sup> at 20 Hz) of the microporous SiO<sub>2</sub> solid electrolytes, which were deposited at room temperature. The subthreshold swing, current on/off ratio, and field-effect mobility of the paper-based nanowire transistors are estimated to be 74 mV/decade, 1.7×10<sup>6</sup>, and 218.3 cm<sup>2</sup>/V·s, respectively. These low-voltage paper-based nanowire transistors show promise for use in portable flexible paper electronics and low-cost portable sensors.https://ieeexplore.ieee.org/document/7835666/Flexible paper electronicsnanowire transistorselectric-double-layer |
| spellingShingle | Huixuan Liu Jing Li Rongri Tan Flexible In<sub>2</sub>O<sub>3</sub> Nanowire Transistors on Paper Substrates Flexible paper electronics nanowire transistors electric-double-layer |
| title | Flexible In<sub>2</sub>O<sub>3</sub> Nanowire Transistors on Paper Substrates |
| title_full | Flexible In<sub>2</sub>O<sub>3</sub> Nanowire Transistors on Paper Substrates |
| title_fullStr | Flexible In<sub>2</sub>O<sub>3</sub> Nanowire Transistors on Paper Substrates |
| title_full_unstemmed | Flexible In<sub>2</sub>O<sub>3</sub> Nanowire Transistors on Paper Substrates |
| title_short | Flexible In<sub>2</sub>O<sub>3</sub> Nanowire Transistors on Paper Substrates |
| title_sort | flexible in sub 2 sub o sub 3 sub nanowire transistors on paper substrates |
| topic | Flexible paper electronics nanowire transistors electric-double-layer |
| url | https://ieeexplore.ieee.org/document/7835666/ |
| work_keys_str_mv | AT huixuanliu flexibleinsub2subosub3subnanowiretransistorsonpapersubstrates AT jingli flexibleinsub2subosub3subnanowiretransistorsonpapersubstrates AT rongritan flexibleinsub2subosub3subnanowiretransistorsonpapersubstrates |