Anisotropic reactive ion etching of 2.5 micrometer thick alpha phase tantalum films for surface micromachining

An etch parameter study is conducted with the objective of achieving high anisotropy for tantalum (Ta) thin films of more than 1 μm in thickness. The gases explored are Argon (Ar), carbon tetrafluoride (CF4) and oxygen. The effects of composition, flow, pressure, and power are investigated. Optical...

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Bibliographic Details

Published in:	Micro and Nano Engineering
Main Authors:	Md Shariful Islam, Longchang Ni, Maarten P. de Boer
Format:	Article
Language:	English
Published:	Elsevier 2025-09-01
Subjects:	Tantalum RIE Anisotropy Etch rate
Online Access:	http://www.sciencedirect.com/science/article/pii/S2590007225000115