Anisotropic reactive ion etching of 2.5 micrometer thick alpha phase tantalum films for surface micromachining

An etch parameter study is conducted with the objective of achieving high anisotropy for tantalum (Ta) thin films of more than 1 μm in thickness. The gases explored are Argon (Ar), carbon tetrafluoride (CF4) and oxygen. The effects of composition, flow, pressure, and power are investigated. Optical...

書目詳細資料
發表在:	Micro and Nano Engineering
Main Authors:	Md Shariful Islam, Longchang Ni, Maarten P. de Boer
格式:	Article
語言:	英语
出版:	Elsevier 2025-09-01
主題:	Tantalum RIE Anisotropy Etch rate
在線閱讀:	http://www.sciencedirect.com/science/article/pii/S2590007225000115

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