Structural and surface characterizations of 2D β-In2Se3/3D β-Ga2O3 heterostructures grown on c-Sapphire substrates by molecular beam epitaxy

Abstract Integrating two-dimensional (2D) layered materials with wide bandgap β-Ga2O3 has unveiled impressive opportunities for exploring novel physics and device concepts. This study presents the epitaxial growth of 2D β-In2Se3/3D β-Ga2O3 heterostructures on c-Sapphire substrates by plasma-assisted...

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Bibliographic Details

Published in:	Scientific Reports
Main Authors:	Umeshwar Reddy Nallasani, Ssu-Kuan Wu, Nhu Quynh Diep, Yen-Yu Lin, Hua-Chiang Wen, Wu-Ching Chou, Chin-Hau Chia
Format:	Article
Language:	English
Published:	Nature Portfolio 2024-03-01
Subjects:	2D layered materials In2Se3 Ga2O3 Mixed-dimensional heterostructure Molecular beam epitaxy RHEED
Online Access:	https://doi.org/10.1038/s41598-024-55830-y