SiO2/Si interface oxidation and defects in O2 plasma processing
The SiO _2 /Si interface oxidation and defects are studied in a low-pressure capacitively-coupled oxygen (O _2 ) plasma. The interface oxidation is clearly observed for a thinner SiO _2 layer under a high-energy ion’s irradiation condition for a long period of processing. The oxidation thickness is...
| 出版年: | Applied Physics Express |
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| 主要な著者: | , , |
| フォーマット: | 論文 |
| 言語: | 英語 |
| 出版事項: |
IOP Publishing
2025-01-01
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| 主題: | |
| オンライン･アクセス: | https://doi.org/10.35848/1882-0786/adb007 |