Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates

The homoepitaxial growth of 4H-SiC films was conducted on 4H-SiC 150 mm 4° off-axis substrates by using a home-made hot-wall chemical vapor deposition (CVD) reactor. Special attention was paid to the influence of the growth temperature on the surface morphology, growth rate, doping efficiency, and s...

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Bibliographic Details

Published in:	Crystals
Main Authors:	Zhuorui Tang, Lin Gu, Hongping Ma, Chaobin Mao, Sanzhong Wu, Nan Zhang, Jiyu Huang, Jiajie Fan
Format:	Article
Language:	English
Published:	MDPI AG 2022-12-01
Subjects:	4H-SiC homoepitaxial layer 150 mm 4° off-axis substrate CVD growth temperature flow ratio uniformity
Online Access:	https://www.mdpi.com/2073-4352/13/1/62