Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design

Abstract Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectric ultrathin films are promising candidates for next-generation low-power memory devices. However, their commercialization has been hindered by reliability issues, with fatigue failure being a major impediment. Here,...

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Bibliographic Details

Published in:	Nature Communications
Main Authors:	Chao Zhou, Yanpeng Feng, Liyang Ma, Haoliang Huang, Yangyang Si, Hailin Wang, Sizhe Huang, Jingxuan Li, Chang-Yang Kuo, Sujit Das, Yunlong Tang, Shi Liu, Zuhuang Chen
Format:	Article
Language:	English
Published:	Nature Portfolio 2025-08-01
Online Access:	https://doi.org/10.1038/s41467-025-63048-3