Evaluation of antiparallel SiC Schottky diode in SiC MOSFET phase-leg configuration of synchronous rectifier
The MOSFET synchronous rectification (SR) is widely used to reduce the conduction loss during the freewheeling period. Due to the wide band gap of silicon carbide (SiC), the intrinsic body diode of SiC MOSFET exhibits a high voltage drop. Therefore, SiC Schottky diodes (SBD) and SiC MOSFETs are usua...
| Published in: | Energy Reports |
|---|---|
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-11-01
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| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352484723013719 |
