Nanoscaffold Ba0.6Sr0.4TiO3:Nd2O3 ferroelectric memristors crossbar array for neuromorphic computing and secure encryption

Recent advancements in AI have spurred interest in ferroelectric memristors for neuromorphic chips due to their ability to precisely control resistive states through polarization flip-flop without electroforming. However, oxygen vacancies in these devices often cause high leakage current, low endura...

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Bibliographic Details

Published in:	Journal of Materiomics
Main Authors:	Weifeng Zhang, Jikang Xu, Yongrui Wang, Yinxing Zhang, Yu Wang, Pengfei Li, Yongqing Jia, Zhen Zhao, Changliang Li, Biao Yang, Yue Hou, Zhenqiang Guo, Zeze Huang, Yincheng Qi, Xiaobing Yan
Format:	Article
Language:	English
Published:	Elsevier 2025-09-01
Subjects:	Ferroelectric memristor Nanoscaffolded Interface channel Multi-factor secure encryption system
Online Access:	http://www.sciencedirect.com/science/article/pii/S2352847825000413