A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology

This study presents a 2–20 GHz monolithic distributed power amplifier (DPA) using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achi...

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Bibliographic Details

Published in:	Journal of the Korean Institute of Electromagnetic Engineering and Science
Main Authors:	Dong-Hwan Shin, In-Bok Yom, Dong-Wook Kim
Format:	Article
Language:	English
Published:	The Korean Institute of Electromagnetic Engineering and Science 2017-10-01
Subjects:	Decade Bandwidth Distributed Power Amplifier High Power Amplifier MMIC 0.25 μm AlGaN/GaN HEMT
Online Access:	http://jees.kr/upload/pdf/jees-2017-17-4-178.pdf