Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate

We have investigated the ferroelectric hafnium nitride (HfN) thin films directly formed on the Si(100) substrate for the metal-ferroelectrics-Si field-effect transistor (MFSFET) applications. The 10 nm thick rhombohedral phase HfN layer was found to be formed on the Si(100) substrate utilizing the p...

全面介紹

書目詳細資料

發表在:	IEEE Journal of the Electron Devices Society
Main Authors:	S. Ohmi, Y. Ohtaguchi, A. Ihara, H. Morita
格式:	Article
語言:	英语
出版:	IEEE 2021-01-01
主題:	Hafnium nitride ferroelectrics rhombohedral phase MFS diode ECR plasma reactive sputtering
在線閱讀:	https://ieeexplore.ieee.org/document/9590540/