Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate

We have investigated the ferroelectric hafnium nitride (HfN) thin films directly formed on the Si(100) substrate for the metal-ferroelectrics-Si field-effect transistor (MFSFET) applications. The 10 nm thick rhombohedral phase HfN layer was found to be formed on the Si(100) substrate utilizing the p...

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Bibliographic Details
Published in:	IEEE Journal of the Electron Devices Society
Main Authors:	S. Ohmi, Y. Ohtaguchi, A. Ihara, H. Morita
Format:	Article
Language:	English
Published:	IEEE 2021-01-01
Subjects:	Hafnium nitride ferroelectrics rhombohedral phase MFS diode ECR plasma reactive sputtering
Online Access:	https://ieeexplore.ieee.org/document/9590540/

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